Substantiation of buried two dimensional hole gas (2DHG) existence in GaN-on-Si epitaxial heterostructure

P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a d...

Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure

Persistent photoconductivity ͑PPC͒ effect associated with a two-dimensional electron gas ͑2DEG͒ in an AlGaN/GaN heterojunction device has been observed. As a consequence, the device was observed to be sensitive to light and the sensitivity was associated with a permanent photoinduced increase in the 2DEG carrier mobility and density. By formulating the PPC buildup and decay kinetics, we attributed ...

Transition voltage of AlGaN/GaN heterostructure MSM varactor with two-dimensional electron gas

a Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava, Slovakia b Department of Physics, University of Central Florida, Orlando, FL 32816-2385, USA c Graduate Institute of Electro-Optical Engineering, Chang Gung University, Tao-Yuan 333, Taiwan d Institute of Electro-Optical Engineering, Green Technology Research Center, Chang Gung University, T...

Room-Temperature mobility above 2200 cm2/Vs of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure